发明授权
- 专利标题： Group III nitride compound semiconductor device
- 专利标题（中）： III族氮化物化合物半导体器件
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申请号： US10869629申请日： 2004-06-17
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公开(公告)号： US07042089B2公开(公告)日： 2006-05-09
- 发明人: Toshiya Uemura , Atsuo Hirano , Koichi Ota , Naohisa Nagasaka
- 申请人： Toshiya Uemura , Atsuo Hirano , Koichi Ota , Naohisa Nagasaka
- 申请人地址： JP Aichi
- 专利权人： Toyoda Gosei Co., Ltd.
- 当前专利权人： Toyoda Gosei Co., Ltd.
- 当前专利权人地址： JP Aichi
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JPP2000-096865 20000331
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
An object of the present invention is to provide a large-size light-emitting device from which uniform light emission can be obtained.That is, in the present invention, in a device having an outermost diameter of not smaller than 700 μm, a distance from an n electrode to a farthest point of a p electrode is selected to be not larger than 500 μm.
公开/授权文献
- US20040232454A1 Group III nitride compound semiconductor device 公开/授权日：2004-11-25