- 专利标题： Semiconductor device and method of fabricating the same
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申请号： US10375146申请日： 2003-02-28
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公开(公告)号： US07045886B2公开(公告)日： 2006-05-16
- 发明人: Kanako Sawada
- 申请人： Kanako Sawada
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farbow, Garrett & Dunner, L.L.P.
- 优先权： JP2002-055285 20020301
- 主分类号： H01L23/02
- IPC分类号： H01L23/02 ; H01L23/28 ; H01L23/34
摘要：
A semiconductor device is disclosed which has a first substrate with wiring formed thereon, a second substrate mounted above the first substrate with a conductive plug buried in the second substrate to penetrate between upper and lower surfaces thereof, a plurality of semiconductor chips mounted above the second substrate and having a terminal electrode as electrically connected to the first substrate through the conductive plug of the second substrate, and a resin buried in an empty space or gap between adjacent ones of the plurality of semiconductor chips.
公开/授权文献
- US20030222350A1 Semiconductor device and method of fabricating the same 公开/授权日：2003-12-04
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