- 专利标题： Semiconductor device and manufacturing method thereof
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申请号： US10438887申请日： 2003-05-16
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公开(公告)号： US07045898B2公开(公告)日： 2006-05-16
- 发明人: Tatsuya Usami
- 申请人： Tatsuya Usami
- 申请人地址： JP Kanagawa
- 专利权人： NEC Electronics Corporation
- 当前专利权人： NEC Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Dickstein, Shapiro, Morin & Oshinsky, LLP.
- 优先权： JP10-371329 19981225
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
There is presented a structure in which outlines of a metal interconnection 111 that is laid in an interlayer insulating film are covered with a barrier metal film 110. As the material for the barrier metal film 110, TaN or the like is utilized.
公开/授权文献
- US20030205810A1 Semiconductor device and manufacturing method thereof 公开/授权日：2003-11-06
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