发明授权
- 专利标题： Lateral doped channel
- 专利标题（中）： 横向掺杂通道
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申请号： US10305724申请日： 2002-11-26
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公开(公告)号： US07049188B2公开(公告)日： 2006-05-23
- 发明人: Nga-Ching Wong , Timothy Thurgate , Sameer S. Haddad
- 申请人： Nga-Ching Wong , Timothy Thurgate , Sameer S. Haddad
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A lateral doped channel. A first doping material is implanted substantially vertically into a region adjacent to a gate structure. A diffusion process diffuses the first doping material into a channel region beneath the gate structure. A second doping material is implanted substantially vertically into the region adjacent to a gate structure. The second implantation forms source/drain regions and may terminate the channel region. The channel region thus comprises a laterally non-uniform doping profile which beneficially mitigates the short channel effect and is highly advantageous as compensation for manufacturing process variations in channel length.
公开/授权文献
- US20040102026A1 Lateral doped channel 公开/授权日：2004-05-27
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