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US07049190B2 Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device 失效
ZnO膜的形成方法，ZnO半导体层的形成方法，半导体装置的制造方法以及半导体装置

  • Patent Title: Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
  • Patent Title (中): ZnO膜的形成方法，ZnO半导体层的形成方法，半导体装置的制造方法以及半导体装置
  • Application No.: US10390563
    Application Date: 2003-03-17
  • Publication No.: US07049190B2
    Publication Date: 2006-05-23
  • Inventor: Katsutoshi Takeda , Masao Isomura
  • Applicant: Katsutoshi Takeda , Masao Isomura
  • Applicant Address: JP Osaka
  • Assignee: Sanyo Electric Co., Ltd.
  • Current Assignee: Sanyo Electric Co., Ltd.
  • Current Assignee Address: JP Osaka
  • Agency: Darby & Darby
  • Priority: JP2002-072906 20020315; JP2002-084770 20020326; JP2003-058611 20030305
  • Main IPC: H01L21/8238
  • IPC: H01L21/8238
Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
Abstract:
A ZnO buffer layer having an electric conductivity of 1×10−9 S/cm or lower or alternatively a ZnO buffer layer having a diffraction peak of a crystal face other than (002) and (004) in X-ray diffraction is formed on a substrate by sputtering. A ZnO semiconductor layer is formed on the ZnO buffer layer. The ZnO semiconductor layer is formed under the condition that the flow rate ratio of an oxygen gas in a sputtering gas is lower than that in the formation of the ZnO buffer layer.
Abstract(Chinese):

具有1×10 -9 S / cm以下的电导率的ZnO缓冲层或具有除了（002）和（004）以外的晶面的衍射峰的ZnO缓冲层， 通过溅射在基板上形成X射线衍射。 在ZnO缓冲层上形成ZnO半导体层。 在溅射气体中的氧气的流量比低于ZnO缓冲层的形成的条件下形成ZnO半导体层。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822 .....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232 ......场效应工艺
H01L21/8234 .......MIS工艺
H01L21/8238 ........互补场效应晶体管，例如CMOS
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