Invention Grant
- Patent Title: Stacked capacitor and method for preparing the same
- Patent Title (中): 堆叠电容器及其制备方法
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Application No.: US10971133Application Date: 2004-10-25
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Publication No.: US07049205B2Publication Date: 2006-05-23
- Inventor: Hsiao Che Wu
- Applicant: Hsiao Che Wu
- Applicant Address: TW Hsinchu
- Assignee: Promos Technologies Inc.
- Current Assignee: Promos Technologies Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Oliff & Berridge, PLC
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
The present invention discloses a stacked capacitor having interdigital electrodes and method for preparing the same. The stacked capacitor comprises a first interdigital electrode, a second interdigital electrode and a dielectric material sandwiched between the first interdigital electrode and the second interdigital electrode. The first and the second interdigital electrodes comprise a body and a plurality of fingers electrically connected to the body, and the dielectric material can be silicon nitride or silicon oxide. Preferably, fingers of the first interdigital electrode are made of titanium nitride, while fingers of the second interdigital electrode are made of polysilicon. The body of the first and the second interdigital electrodes are preferably made of titanium nitride.
Public/Granted literature
- US20060086962A1 STACKED CAPACITOR AND METHOD FOR PREPARING THE SAME Public/Granted day:2006-04-27
Information query
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