Invention Grant
- Patent Title: Field emission device
- Patent Title (中): 场发射装置
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Application No.: US10730911Application Date: 2003-12-10
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Publication No.: US07049739B2Publication Date: 2006-05-23
- Inventor: Yong-wan Jin , Jung-woo Kim , Jae-eun Jung , Young-jun Park
- Applicant: Yong-wan Jin , Jung-woo Kim , Jae-eun Jung , Young-jun Park
- Applicant Address: KR Suwon-si
- Assignee: Samsung SDI Co., Ltd.
- Current Assignee: Samsung SDI Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Buchanan Ingersoll PC
- Priority: KR10-2002-0078169 20021210
- Main IPC: H01J1/62
- IPC: H01J1/62

Abstract:
A field emission device using carbon nanotubes (CNTs) is provided. The field emission device includes a cathode on which a plurality of CNT emitters are arranged, a gate insulating layer having a through hole through which electrons emitted from the CNT emitters pass, and a gate electrode which corresponds to the through hole of the gate insulating layer and has an enlongated gate hole that forms an electric field having different strengths in a first direction and in a second direction orthogonal to the first direction.
Public/Granted literature
- US20040183420A1 Field emission device Public/Granted day:2004-09-23
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