- 专利标题: High frequency power amplifier circuit device
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申请号: US10849852申请日: 2004-05-21
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公开(公告)号: US07049892B2公开(公告)日: 2006-05-23
- 发明人: Yoshikuni Matsunaga , Toshihiko Shimizu , Tomio Furuya , Nobuhiro Matsudaira , Koichi Matsushita
- 申请人: Yoshikuni Matsunaga , Toshihiko Shimizu , Tomio Furuya , Nobuhiro Matsudaira , Koichi Matsushita
- 申请人地址: JP Tokyo JP Kanagawa
- 专利权人: Renesas Technology Corp.,Hitachi Communications Systems, Inc.
- 当前专利权人: Renesas Technology Corp.,Hitachi Communications Systems, Inc.
- 当前专利权人地址: JP Tokyo JP Kanagawa
- 代理机构: Mattingly, Stanger, Malur & Brundidge, P.C.
- 优先权: JP2001-221065 20010723
- 主分类号: H03G3/30
- IPC分类号: H03G3/30
摘要:
A multistage high frequency power amplifier circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.
公开/授权文献
- US20040212436A1 High frequency power amplifier circuit device 公开/授权日:2004-10-28
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