发明授权
- 专利标题: Monolithic multi-functional integrated sensor and method for fabricating the same
- 专利标题(中): 单片多功能集成传感器及其制造方法
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申请号: US11150212申请日: 2005-06-13
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公开(公告)号: US07051595B2公开(公告)日: 2006-05-30
- 发明人: Sang-wook Kwon , Jong-hwa Won
- 申请人: Sang-wook Kwon , Jong-hwa Won
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2004-0042873 20040611
- 主分类号: G01L19/04
- IPC分类号: G01L19/04 ; G01L9/06
摘要:
A monolithic multi-functional integrated sensor and method for making the monolithic multi-functional integrated sensor. The monolithic multi-functional integrated sensor includes: a pressure sensor including a plurality of piezoresistors having resistance values which vary with a change in external pressure, the piezoresistors being disposed in a direction so as to be subject to a piezoresistive effect produced by the external pressure at or beyond a predetermined first level; and a temperature sensor including a resistor having a resistance value which varies with a change in temperature, the resistor being disposed in a direction so as to be subject to a piezoresistive effect produced by the external pressure below a predetermined second level.
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