发明授权
- 专利标题： Strained channel transistor and methods of manufacture
- 专利标题（中）： 应变通道晶体管及其制造方法
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申请号： US11081919申请日： 2005-03-16
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公开(公告)号： US07052964B2公开(公告)日： 2006-05-30
- 发明人: Yee-Chia Yeo , Chih-Hsin Ko , Wen-Chin Lee , Chenming Hu
- 申请人： Yee-Chia Yeo , Chih-Hsin Ko , Wen-Chin Lee , Chenming Hu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A semiconductor device includes a region of semiconductor material with first and second isolation trenches formed therein. The first isolation trench is lined with a first material having a low oxygen diffusion rate and is filled with an insulating material. The second isolation trench is not lined with the first material but is filled with an insulating material. A first transistor is formed adjacent the first isolation region and a second transistor formed adjacent the second isolation region.
公开/授权文献
- US20050156274A1 Strained channel transistor and methods of manufacture 公开/授权日：2005-07-21
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