Invention Grant
- Patent Title: Strained channel transistor and methods of manufacture
- Patent Title (中): 应变通道晶体管及其制造方法
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Application No.: US11081919Application Date: 2005-03-16
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Publication No.: US07052964B2Publication Date: 2006-05-30
- Inventor: Yee-Chia Yeo , Chih-Hsin Ko , Wen-Chin Lee , Chenming Hu
- Applicant: Yee-Chia Yeo , Chih-Hsin Ko , Wen-Chin Lee , Chenming Hu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor device includes a region of semiconductor material with first and second isolation trenches formed therein. The first isolation trench is lined with a first material having a low oxygen diffusion rate and is filled with an insulating material. The second isolation trench is not lined with the first material but is filled with an insulating material. A first transistor is formed adjacent the first isolation region and a second transistor formed adjacent the second isolation region.
Public/Granted literature
- US20050156274A1 Strained channel transistor and methods of manufacture Public/Granted day:2005-07-21
Information query
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