发明授权
US07053001B2 Selective etching processes for In2O3 thin films in FeRAM device applications
有权
FeRAM器件应用中In2O3薄膜的选择性蚀刻工艺
- 专利标题： Selective etching processes for In2O3 thin films in FeRAM device applications
- 专利标题（中）： FeRAM器件应用中In2O3薄膜的选择性蚀刻工艺
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申请号： US10676983申请日： 2003-09-30
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公开(公告)号： US07053001B2公开(公告)日： 2006-05-30
- 发明人: Tingkai Li , Sheng Teng Hsu , Bruce Dale Ulrich
- 申请人： Tingkai Li , Sheng Teng Hsu , Bruce Dale Ulrich
- 申请人地址： US WA Camas
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人地址： US WA Camas
- 代理机构： Robert D. Varitz, P.C.
- 主分类号： H01I21/302
- IPC分类号： H01I21/302
摘要：
A method of selective etching a metal oxide layer for fabrication of a ferroelectric device includes preparing a silicon substrate, including forming an oxide layer thereon; depositing a layer of metal or metal oxide thin film on the substrate; patterning and selectively etching the metal or metal oxide thin film without substantially over etching into the underlying oxide layer; depositing a layer of ferroelectric material; depositing a top electrode on the ferroelectric material; and completing the ferroelectric device.
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