发明授权
- 专利标题: Semiconductor device and method for fabricating the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US10752668申请日: 2004-01-08
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公开(公告)号: US07053436B2公开(公告)日: 2006-05-30
- 发明人: Yoshihisa Nagano , Toshie Kutsunai
- 申请人: Yoshihisa Nagano , Toshie Kutsunai
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2003-074874 20030319
- 主分类号: H01L27/108
- IPC分类号: H01L27/108
摘要:
A conductive oxygen barrier layer is formed on an interlayer dielectric film and patterned such that it is in contact with the top surface of a contact plug to prevent the diffusion of oxygen into the contact plug from above. The conductive oxygen barrier layer is composed of a lower layer containing a conductive nitride such as TiAlN, and an upper layer containing a conductive oxide such as IrO2. An insulative oxygen barrier layer composed of Al2O3 and having a thickness of approximately 20 nm is formed on the side surfaces of the conductive oxygen barrier layer to prevent the diffusion of oxygen into the contact plug from the sides, such as from the sides of the lower layer of the conductive barrier layer.
公开/授权文献
- US20040185653A1 Semiconductor device and method for fabricating the same 公开/授权日:2004-09-23
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