Invention Grant
US07053670B2 Semiconductor integrated circuit device and semiconductor integrated circuit 有权
半导体集成电路器件和半导体集成电路

  • Patent Title: Semiconductor integrated circuit device and semiconductor integrated circuit
  • Patent Title (中): 半导体集成电路器件和半导体集成电路
  • Application No.: US10751917
    Application Date: 2004-01-07
  • Publication No.: US07053670B2
    Publication Date: 2006-05-30
  • Inventor: Takashi MutoToshiro Takahashi
  • Applicant: Takashi MutoToshiro Takahashi
  • Applicant Address: JP Tokyo
  • Assignee: Hitachi, Ltd.
  • Current Assignee: Hitachi, Ltd.
  • Current Assignee Address: JP Tokyo
  • Agency: Reed Smith LLP
  • Agent Stanley P. Fisher, Esq.; Juan Carlos A. Marquez, Esq.
  • Priority: JP2003-001825 20030108
  • Main IPC: H03K5/22
  • IPC: H03K5/22
Semiconductor integrated circuit device and semiconductor integrated circuit
Abstract:
Disclosed herewith is a semiconductor integrated circuit provided with a differential input circuit that can transmit data signals fast to an internal circuit free from distortion of their waveforms without increasing the subject chip in size. The differential input circuit is provided with a pair of first differential input transistors used to amplify mainly the low frequency components of those input signals and having gate terminals connected to a pair of input terminals that receive inputs of differential signals respectively, as well as a pair of second differential input transistors used mainly to amplify high frequency components of those input signals and having control terminals connected to a pair of input terminals that receive inputs of differential signals respectively through capacitance elements. The pairs of first and second differential transistors are connected to each other through a differential connection point (common source).
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