发明授权
- 专利标题： Method for forming capacitor of semiconductor device
- 专利标题（中）： 形成半导体器件电容器的方法
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申请号： US10879508申请日： 2004-06-30
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公开(公告)号： US07056803B2公开(公告)日： 2006-06-06
- 发明人: Jong Goo Jung , Hyung Soon Park
- 申请人： Jong Goo Jung , Hyung Soon Park
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Heller Ehrman LLP
- 优先权： KR10-2003-0093920 20031219
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
Disclosed is a method for forming a capacitor of a semiconductor device. The method comprises the steps of: forming a nitride film for storage electrode on a semiconductor substrate; forming an oxide film for storage electrode on the nitride film; selectively etching the oxide film and the nitride film to define a storage electrode region; forming a conductive layer for storage electrode on the semiconductor substrate including the storage electrode region; forming a gap-filling nitride film on the semiconductor substrate to fill up the storage electrode region; performing a CMP process using the oxide film as a polishing stop layer to form a storage electrode; and removing the gap-filling nitride film.
公开/授权文献
- US20050136590A1 Method for forming capacitor of semiconductor device 公开/授权日：2005-06-23
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