发明授权
- 专利标题： Process of insulating a semiconductor device using a polymeric material
- 专利标题（中）： 使用聚合材料绝缘半导体器件的工艺
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申请号： US10456299申请日： 2003-06-06
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公开(公告)号： US07056837B2公开(公告)日： 2006-06-06
- 发明人: John M. Cotte , Kenneth John McCullough , Wayne Martin Moreau , Kevin Petrarca , John P. Simons , Charles J. Taft , Richard Volant
- 申请人： John M. Cotte , Kenneth John McCullough , Wayne Martin Moreau , Kevin Petrarca , John P. Simons , Charles J. Taft , Richard Volant
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Daniel P. Morris, Esq.
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A dielectric material formed by contacting a low dielectric constant polymer with liquid or supercritical carbon dioxide, under thermodynamic conditions which maintain the carbon dioxide in the liquid or supercritical state, wherein a porous product is formed. Thereupon, thermodynamic conditions are changed to ambient wherein carbon dioxide escapes from the pores and is replaced with air.