发明授权
- 专利标题: Diamond-silicon carbide composite
- 专利标题(中): 金刚石 - 碳化硅复合材料
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申请号: US11110252申请日: 2005-04-19
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公开(公告)号: US07060641B2公开(公告)日: 2006-06-13
- 发明人: Jiang Qian , Yusheng Zhao
- 申请人: Jiang Qian , Yusheng Zhao
- 申请人地址: US NM Los Alamos
- 专利权人: The Regents of the University of California
- 当前专利权人: The Regents of the University of California
- 当前专利权人地址: US NM Los Alamos
- 代理商 Samuel L. Borkowsky
- 主分类号: C04B35/577
- IPC分类号: C04B35/577
摘要:
Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa·m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.
公开/授权文献
- US20050209089A1 Diamond-silicon carbide composite 公开/授权日:2005-09-22
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