Invention Grant
US07061034B2 Magnetic random access memory including middle oxide layer and method of manufacturing the same
失效
包括中间氧化物层的磁性随机存取存储器及其制造方法
- Patent Title: Magnetic random access memory including middle oxide layer and method of manufacturing the same
- Patent Title (中): 包括中间氧化物层的磁性随机存取存储器及其制造方法
-
Application No.: US10830119Application Date: 2004-04-23
-
Publication No.: US07061034B2Publication Date: 2006-06-13
- Inventor: Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
- Applicant: Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lee & Morse, P.C.
- Priority: KR10-2003-0025716 20030423
- Main IPC: H01L31/062
- IPC: H01L31/062
Abstract:
In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.
Public/Granted literature
- US20040211995A1 Magnetic random access memory including middle oxide layer and method of manufacturing the same Public/Granted day:2004-10-28
Information query
IPC分类:
