发明授权
- 专利标题： Self-aligned V0-contact for cell size reduction
- 专利标题（中）： 自对准V0接触用于电池尺寸减小
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申请号： US10677852申请日： 2003-10-01
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公开(公告)号： US07061035B2公开(公告)日： 2006-06-13
- 发明人: Jingyu Lian , Nicolas Nagel , Stefan Gernhardt , Rainer Bruchhaus , Andreas Hilliger , Uwe Wellhausen
- 申请人： Jingyu Lian , Nicolas Nagel , Stefan Gernhardt , Rainer Bruchhaus , Andreas Hilliger , Uwe Wellhausen
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 代理机构： Fish & Richardson P.C.
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
An FeRAM comprising includes a ferroelectric material sandwiched between a top electrode and a bottom electrode. A V0-contact provides an electrical connection with an underlying CS-contact. The V0-contact is aligned using the bottom electrode. A liner layer covers a sidewall of the bottom electrode and provides a stop to an etch a hole forming the V0-contact. A method is utilized to form a V0-contact in an FeRAM comprising. An Fe capacitor of the FeRAM is encapsulated, a bottom electrode is etched, a liner layer is deposited covering a sidewall of the bottom electrode, and a hole is etched for the VO-contact until the etching is stopped by the liner layer.
公开/授权文献
- US20050082583A1 Self-aligned Vo-contact for cell size reduction 公开/授权日：2005-04-21
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