A method is provided to fabricate a bipolar transistor with a low base connection resistance, low defect density and improved scalability. Scalability is to be understood in this case as both the lateral scaling of the emitter window and the vertical scaling of the base width (low temperature budget). The temperature budget can be kept low in the base region since no implantations are required in order to reduce the base connection resistance. Furthermore, the difficulties associated with the point defects are largely avoided.