发明授权
US07064450B1 Semiconductor die with high density offset-inline bond arrangement
有权
具有高密度偏移在线键合的半导体芯片
- 专利标题： Semiconductor die with high density offset-inline bond arrangement
- 专利标题（中）： 具有高密度偏移在线键合的半导体芯片
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申请号： US10842756申请日： 2004-05-11
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公开(公告)号： US07064450B1公开(公告)日： 2006-06-20
- 发明人: Abu K. Eghan , Richard C. Li , Xin X. Wu
- 申请人： Abu K. Eghan , Richard C. Li , Xin X. Wu
- 申请人地址： US CA San Jose
- 专利权人： Xilinx, Inc.
- 当前专利权人： Xilinx, Inc.
- 当前专利权人地址： US CA San Jose
- 代理商 E. Eric Hoffman; LeRoy D. Maunu; Justin Liu
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A pad pattern of a die includes first and second sets of elongated pads. The first set of elongated pads is interleaved with the second set of elongated pads. Each of the elongated pads has a bond pad area and a probe pad. Each bond pad area has a first constant width along a substantial portion thereof. Similarly, each probe pad area has a second constant width along a substantial portion thereof. The first constant width is greater than the second constant width. Each elongated pad in the first set has a first orientation. Similarly, each elongated pad in the second set has a second orientation, opposite the first orientation.
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