Invention Grant
- Patent Title: Emitter
- Patent Title (中): 发射器
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Application No.: US09759746Application Date: 2001-01-12
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Publication No.: US07064476B2Publication Date: 2006-06-20
- Inventor: David A. Cathey
- Applicant: David A. Cathey
- Applicant Address: US IA Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US IA Boise
- Agency: TraskBritt
- Main IPC: H01J1/14
- IPC: H01J1/14

Abstract:
Electron emitters and a method of fabricating emitters are disclosed, having a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.
Public/Granted literature
- US20020093281A1 Electron emitters and method for forming them Public/Granted day:2002-07-18
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