发明授权
- 专利标题: Treating agent for metal-hydride-containing exhaust gas and method of preparing the same as well as method of treating metal-hydride-containing exhaust gas
- 专利标题(中): 含金属氢化物废气的处理剂及其制备方法以及处理含金属氢化物废气的方法
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申请号: US10204303申请日: 2001-06-28
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公开(公告)号: US07067091B2公开(公告)日: 2006-06-27
- 发明人: Satoshi Teshigawara , Minoru Takachi , Yoshihiro Matsuda , Hidetaka Shibano , Yoshiyuki Tomiyama
- 申请人: Satoshi Teshigawara , Minoru Takachi , Yoshihiro Matsuda , Hidetaka Shibano , Yoshiyuki Tomiyama
- 申请人地址: JP Tokyo
- 专利权人: Sued-Chemie Catalysts Japan Inc.
- 当前专利权人: Sued-Chemie Catalysts Japan Inc.
- 当前专利权人地址: JP Tokyo
- 代理机构: Young & Thompson
- 国际申请: PCT/JP01/05595 WO 20010628
- 国际公布: WO03/002235 WO 20030109
- 主分类号: B01D47/00
- IPC分类号: B01D47/00
摘要:
An object of the present invention is to provide a treatment agent superior in harm-removing performance to metal hydride containing exhaust gas, and its production method as well as a treatment method. It is a mixture of either copper hydroxide or basic copper carbonate and silicon compound or a mixture, wherein parts of said copper compound and said silicon compound form a complex. A preparation of the treatment agent is made by a precipitation method, wherein a copper salts solution serves as a precipitation mother solution, and a mixture solution of either alkali hydroxide or alkali carbonate and alkali silicate serves as a precipitating agent. A treatment agent obtained as its result shows a high harm-removing performance to the metal hydride gas and a low heat generation, for which reason the agent is useful for treatment of the metal hydride containing exhaust gas generated in semiconductor manufacturing.
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