Invention Grant
- Patent Title: Power sag detection and control in ion implanting system
- Patent Title (中): 离子注入系统中的功率下垂检测与控制
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Application No.: US10995836Application Date: 2004-11-23
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Publication No.: US07067829B2Publication Date: 2006-06-27
- Inventor: Steven Richards , Julian G. Blake , Steven Campbell
- Applicant: Steven Richards , Julian G. Blake , Steven Campbell
- Applicant Address: US MA Danvers
- Assignee: Ibis Technology Coporation
- Current Assignee: Ibis Technology Coporation
- Current Assignee Address: US MA Danvers
- Agency: Nutter McClennen & Fish LLP
- Agent Thomas J. Engellenner; Reza Mollaaghababa
- Main IPC: H01J37/317
- IPC: H01J37/317

Abstract:
In one aspect, the present invention provides a method of managing fluctuations in power supplied to a semiconductor processing apparatus that includes monitoring the power supplied to the apparatus to detect the occurrence of a power fluctuation event during a semiconductor processing session. Upon detection of a power fluctuation event, the semiconductor processing can be interrupted. After the end of the power fluctuation event, at least one operational parameter of the apparatus, e.g., vacuum level in an evacuated processing chamber, can be measured, and the semiconductor processing can be resumed when the measured operational parameter is within an acceptable range. The measured operational parameter can preferably include a parameter that recovers more slowly than others when adversely affected by a power fluctuation event.
Public/Granted literature
- US20060108544A1 POWER SAG DETECTION AND CONTROL IN ION IMPLANTING SYSTEM Public/Granted day:2006-05-25
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