Invention Grant
- Patent Title: Method of defect review
- Patent Title (中): 缺陷审查方法
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Application No.: US10707824Application Date: 2004-01-15
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Publication No.: US07071011B2Publication Date: 2006-07-04
- Inventor: Long-Hui Lin
- Applicant: Long-Hui Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Powerchip Semiconductor Corp.
- Current Assignee: Powerchip Semiconductor Corp.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method of defect review. First, a wafer with a plurality of defects is provided. A defect inspection is performed to detect the defects. An automatic defect classification is then performed to divide the defects into different defect types according to a predetermined database. A defect review is performed to review different defect types of defects which are sampled in different weights according to yield killing ratios of each defect types.
Public/Granted literature
- US20050159909A1 METHOD OF DEFECT REVIEW Public/Granted day:2005-07-21
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