发明授权
US07071047B1 Method of forming buried isolation regions in semiconductor substrates and semiconductor devices with buried isolation regions
失效
在半导体衬底和具有掩埋隔离区的半导体器件中形成掩埋隔离区的方法
- 专利标题： Method of forming buried isolation regions in semiconductor substrates and semiconductor devices with buried isolation regions
- 专利标题（中）： 在半导体衬底和具有掩埋隔离区的半导体器件中形成掩埋隔离区的方法
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申请号： US10905980申请日： 2005-01-28
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公开(公告)号： US07071047B1公开(公告)日： 2006-07-04
- 发明人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III
- 申请人： Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Schmeiser, Olsen & Watts
- 代理商 William D. Sabo
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
Semiconductor structures and method of forming semiconductor structures. The semiconductor structures including nano-structures or fabricated using nano-structures. The method of forming semiconductor structures including generating nano-structures using a nano-mask and performing additional semiconductor processing steps using the nano-structures generated.