Barrier metal re-distribution process for resistivity reduction

Invention Grant

US07071095B2 Barrier metal re-distribution process for resistivity reduction 失效

Title translation: 阻隔金属重新分配过程的电阻率降低

Please log in to see more content

Patent Title: Barrier metal re-distribution process for resistivity reduction
Patent Title (中): 阻隔金属重新分配过程的电阻率降低
Application No.: US10850763

Application Date: 2004-05-20
Publication No.: US07071095B2

Publication Date: 2006-07-04
Inventor: Cheng-Lin Huang , Ching-Hua Hsieh , Shau-Lin Shue
Applicant: Cheng-Lin Huang , Ching-Hua Hsieh , Shau-Lin Shue
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company
Current Assignee: Taiwan Semiconductor Manufacturing Company
Current Assignee Address: TW Hsin-Chu
Agency: Tung & Assoc.
Main IPC: H01L21/4763
IPC: H01L21/4763

Barrier metal re-distribution process for resistivity reduction

Abstract:

A novel process for re-distributing a barrier layer deposited on a single damascene, dual damascene or other contact opening structure. The process includes providing a substrate having a contact opening structure and a metal barrier layer deposited in the contact opening structure, re-sputtering the barrier layer by bombarding the barrier layer with argon ions and metal ions, and re-sputtering the barrier layer by bombarding the barrier layer with argon ions.

Abstract(Chinese):

一种用于重新分布沉积在单个镶嵌，双镶嵌或其他接触开口结构上的阻挡层的新方法。该方法包括提供具有接触开口结构的衬底和沉积在接触开口结构中的金属阻挡层，通过用氩离子和金属离子轰击阻挡层来重新溅射阻挡层，并通过轰击来重新溅射阻挡层阻挡层具有氩离子。

Public/Granted literature

US20050260851A1 Barrier metal re-distribution process for resistivity reduction Public/Granted day:2005-11-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）