Invention Grant
- Patent Title: Semiconductor memory device, write control circuit and write control method for the same
- Patent Title (中): 半导体存储器件,写控制电路和写控制方法相同
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Application No.: US10927142Application Date: 2004-08-27
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Publication No.: US07075854B2Publication Date: 2006-07-11
- Inventor: Sei-Hui Lee , Sang-Seok Kang
- Applicant: Sei-Hui Lee , Sang-Seok Kang
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2003-0086288 20031201
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
A semiconductor memory device and a write control circuit which may detect write failures and a write control method for the same are provided. The semiconductor memory device may include a memory cell array, a bit line amplifier, a switch unit, and a write driver. Exemplary embodiments of the semiconductor memory device, according to the present invention, may determine the activation timing of the column select line signal using a clock enable signal and a mode register set signal, without synchronizing with a master clock signal.
Public/Granted literature
- US20050117437A1 Semiconductor memory device, write control circuit and write control method for the same Public/Granted day:2005-06-02
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