发明授权
- 专利标题： Method for manufacturing single-sided buried strap in semiconductor devices
- 专利标题（中）： 在半导体器件中制造单面埋入带的方法
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申请号： US10940761申请日： 2004-09-15
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公开(公告)号： US07078307B2公开(公告)日： 2006-07-18
- 发明人: Shian-Jyh Lin , Chia-Sheng Yu
- 申请人： Shian-Jyh Lin , Chia-Sheng Yu
- 申请人地址： TW
- 专利权人： Nanya Technology Corp.
- 当前专利权人： Nanya Technology Corp.
- 当前专利权人地址： TW
- 代理机构： Pillsbury Winthrop Shaw Pittman LLP
- 代理商 Michael Bednarek
- 优先权： TW93101800A 20040128
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for manufacturing a single-ended buried strap used in semiconductor devices is disclosed. According to the present invention, a trench capacitor structure is formed in a semiconductor substrate, wherein the trench capacitor structure has a contact surface lower than a surface of the semiconductor substrate such that a recess is formed. Then, an insulative layer is formed on a sidewall of the recess. Next, impurities are implanted into a portion of the insulative layer, and the impurity-containing insulative layer is thereafter removed such that at least a portion of the contact surface and a portion of sidewall of the recess are exposed. A buried strap is sequentially formed on the exposed sidewall of the recess to be in contact with the exposed contact surface.
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