发明授权
US07081397B2 Trench sidewall passivation for lateral RIE in a selective silicon-on-insulator process flow
失效
在选择性绝缘体上硅工艺流程中横向RIE的沟槽侧壁钝化
- 专利标题： Trench sidewall passivation for lateral RIE in a selective silicon-on-insulator process flow
- 专利标题（中）： 在选择性绝缘体上硅工艺流程中横向RIE的沟槽侧壁钝化
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申请号： US10929990申请日： 2004-08-30
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公开(公告)号： US07081397B2公开(公告)日： 2006-07-25
- 发明人: Christopher V. Baiocco , An L. Steegen , Ying Zhang
- 申请人： Christopher V. Baiocco , An L. Steegen , Ying Zhang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Graham S. Jones; H. Daniel Schnurmann
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A lateral trench in a semiconductor substrate is formed by the following steps. Form a lateral implant mask (LIM) over a top surface of the semiconductor substrate. Implant a heavy dopant concentration into the substrate through the LIM to form a lateral implant region (LIR) in the substrate. Strip the LIM exposing the top surface of the substrate. Form an epitaxial silicon layer over the top surface of the substrate burying the LIR. Form a trench mask over the epitaxial layer. Etch a trench reaching through the epitaxial layer and the LIR. Form oxidized trench sidewalls, an oxidized trench bottom and oxidized sidewalls of the LIR. Etch the oxidized sidewalls of the LIR until the LIR is exposed. Form laterally extending trenches by etching away the LIR.