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发明授权
US07081640B2 Organic semiconductor element having high insulation strength and fabrication method thereof 失效
绝缘强度高的有机半导体元件及其制造方法

Organic semiconductor element having high insulation strength and fabrication method thereof
摘要：
The present invention provides an organic semiconductor element in which the insulation strength of the insulation layer and the carrier mobility of the organic semiconductor are both high. The semiconductor layer is an organic semiconductor element consisting of an organic compound. A gate oxide film consisting of an oxide of the gate electrode material is provided between the gate electrode and the gate insulation layer. The gate insulation layer consists of an organic compound.
摘要（中）：

本发明提供一种有机半导体元件，其中绝缘层的绝缘强度和有机半导体的载流子迁移率均高。 半导体层是由有机化合物构成的有机半导体元件。 由栅电极材料的氧化物构成的栅极氧化膜设置在栅极电极和栅极绝缘层之间。 栅极绝缘层由有机化合物组成。

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