发明授权
- 专利标题: Multilayered cap barrier in microelectronic interconnect structures
- 专利标题(中): 微电子互连结构中的多层盖屏障
-
申请号: US10648884申请日: 2003-08-27
-
公开(公告)号: US07081673B2公开(公告)日: 2006-07-25
- 发明人: Jeffrey C. Hedrick , Elbert E. Huang
- 申请人: Jeffrey C. Hedrick , Elbert E. Huang
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Daniel P. Morris, Esq.
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
Structures having low-k multilayered dielectric diffusion barrier layer having at least one low-k sublayer and at least one air barrier sublayer are described herein. The multilayered dielectric diffusion barrier layer are diffusion barriers to metal and barriers to air permeation. Methods and compositions relating to the generation of the structures are also described. The advantages of utilizing these low-k multilayered dielectric diffusion barrier layer is a gain in chip performance through a reduction in capacitance between conducting metal features and an increase in reliability as the multilayered dielectric diffusion barrier layer are impermeable to air and prevent metal diffusion.