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发明授权
US07084449B2 Microelectronic element having trench capacitors with different capacitance values 失效
具有不同电容值的沟槽电容器的微电子元件

Microelectronic element having trench capacitors with different capacitance values
摘要：
A microelectronic element is provided having a major surface, the microelectronic element including a first capacitor formed on a sidewall of a first trench, the first trench being elongated in a downwardly extending direction from the major surface. The microelectronic element further includes a second capacitor formed on a sidewall of a second trench, the second trench being elongated in a downwardly extending direction from the major surface, wherein a top of the first capacitor is disposed at a first depth from the major surface, and a top of the second capacitor is disposed at a second depth from the major surface.
摘要（中）：

提供具有主表面的微电子元件，微电子元件包括形成在第一沟槽的侧壁上的第一电容器，第一沟槽从主表面沿向下延伸的方向伸长。 微电子元件还包括形成在第二沟槽的侧壁上的第二电容器，第二沟槽从主表面沿向下延伸的方向伸长，其中第一电容器的顶部设置在距离主表面的第一深度处， 并且第二电容器的顶部设置在距离主表面的第二深度处。

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