- 专利标题: Photoelectric conversion device and method of production thereof
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申请号: US10663752申请日: 2003-09-17
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公开(公告)号: US07087831B2公开(公告)日: 2006-08-08
- 发明人: Tohru Den , Hiroshi Okura
- 申请人: Tohru Den , Hiroshi Okura
- 申请人地址: JP Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 代理机构: Fitzpatrick, Cella, Harper & Scinto
- 优先权: JP11-268725 19990922; JP2000-181747 20000616
- 主分类号: H01L31/0352
- IPC分类号: H01L31/0352 ; H01L31/0264 ; H01L31/036
摘要:
A photoelectric conversion device comprising at least an electron acceptive charge transfer layer, an electron donative charge transfer layer, and a light absorption layer existing between the charge transfer layers, wherein either one of the charge transfer layers comprises a semiconductor acicular crystal layer comprising an aggregate of acicular crystals or a mixture of an acicular crystal and another crystal, and a method of producing the device are disclosed. Consequently, a photoelectric conversion device being capable of smoothly carrying out transfer of electrons and having high photoelectric conversion efficiency is provided.
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