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Invention Grant
US07091073B2 Semiconductor component, active matrix substrate for a liquid crystal display, and methods of manufacturing such component and substrate 有权
半导体元件，液晶显示器的有源矩阵基板以及制造这种元件和基板的方法

  • Patent Title: Semiconductor component, active matrix substrate for a liquid crystal display, and methods of manufacturing such component and substrate
  • Patent Title (中): 半导体元件，液晶显示器的有源矩阵基板以及制造这种元件和基板的方法
  • Application No.: US10454671
    Application Date: 2003-06-05
  • Publication No.: US07091073B2
    Publication Date: 2006-08-15
  • Inventor: Satoshi Inoue
  • Applicant: Satoshi Inoue
  • Applicant Address: JP Tokyo
  • Assignee: Seiko Epson Corporation
  • Current Assignee: Seiko Epson Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Oliff and Berridge, PLC
  • Priority: JP10-78147 19980325
  • Main IPC: H01L21/84
  • IPC: H01L21/84
Semiconductor component, active matrix substrate for a liquid crystal display, and methods of manufacturing such component and substrate
Abstract:
In contrast to conventional semiconductor components formed on a silicon substrate, the present invention aims at providing a transistor component functioning as a semiconductor component by being placed on an insulating substrate made of plastic and the like. The transistor component according to the present invention comprises a silicon grain 100A with a drain area 402 and a source area 401 formed via a channel area 403, an oxidation film 101 covering the surface of the silicon grain 100A, a gate electrode 300A connecting with the channel area 403 via the oxidation film 101, and a drain electrode 200A electrically connecting with the drain area 402, and a source electrode 400A electrically connecting with the source area 401.
Abstract(Chinese):

与形成在硅衬底上的常规半导体组件相反，本发明旨在通过放置在由塑料等制成的绝缘衬底上提供用作半导体组件的晶体管组件。 根据本发明的晶体管部件包括具有漏极区域402的硅晶粒100A和经由沟道区域403形成的源极区域401，覆盖硅晶粒100A的表面的氧化膜101，栅极电极300A 通过氧化膜101与沟道区域403连接，以及与漏极区域402电连接的漏极电极200A以及与源极区域401电连接的源极电极400A。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84 .....衬底不是半导体的，例如绝缘体
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