发明授权
- 专利标题： Plasma immersion ion implantation process
- 专利标题（中）： 等离子体浸没离子注入工艺
-
申请号： US11046661申请日： 2005-01-28
-
公开(公告)号： US07094670B2公开(公告)日： 2006-08-22
- 发明人: Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo
- 申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Law Office of Robert M. Wallace
- 主分类号： H01L21/42
- IPC分类号： H01L21/42 ; H01L21/425 ; H01L21/205
摘要：
A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, includes placing the workpiece on a workpiece support in the chamber, controlling a temperature of the wafer support near a constant level, performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma while minimizing deposition and minimizing etching by holding the temperature of the workpiece within a temperature range that is above a workpiece deposition threshold temperature and below a workpiece etch threshold temperature.
公开/授权文献
- US20050191830A1 Plasma immersion ion implantation process 公开/授权日：2005-09-01
信息查询
IPC分类:
