A method of forming a tungsten nitride thin film in an integrated circuit includes preparing a silicon substrate on a silicon wafer and placing the silicon wafer in a heatable chuck in a CVD vacuum chamber; placing a known quantity of a tungsten source in a variable-temperature bubbler to provide a gaseous tungsten source; setting the variable-temperature bubbler to a predetermined temperature; passing a carrier gas through the variable-temperature bubbler and carrying the gaseous tungsten source with the carrier gas into the CVD vacuum chamber; introducing a nitrogen-containing reactant gas into the CVD vacuum chamber; reacting the gaseous tungsten source and the nitrogen-containing reactant gas above the surface of the silicon wafer in a deposition process to deposit a WxNy thin film on the surface of the silicon wafer; and completing the integrated circuit containing the WxNy thin film.