发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10998182申请日： 2004-11-29
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公开(公告)号： US07095045B2公开(公告)日： 2006-08-22
- 发明人: Shuichi Chiba , Masahiko Ishiguri , Koichi Murata , Eiji Watanabe , Michiaki Tamagawa , Akira Satoh , Yasushi Toida , Kazuhiro Misawa
- 申请人： Shuichi Chiba , Masahiko Ishiguri , Koichi Murata , Eiji Watanabe , Michiaki Tamagawa , Akira Satoh , Yasushi Toida , Kazuhiro Misawa
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP.
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L29/10
摘要：
A semiconductor device includes a substrate, a pad electrode formed on the substrate and a bump electrode formed on the pad electrode, wherein the pad electrode has an irregular flaw, and there is provided a pattern covering the irregular flaw between the pad electrode an the bump electrode.
公开/授权文献
- US20050151250A1 Semiconductor device and manufacturing method thereof 公开/授权日：2005-07-14