发明授权
- 专利标题： Method and system for programming and inhibiting multi-level, non-volatile memory cells
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申请号： US11223709申请日： 2005-09-09
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公开(公告)号： US07095654B2公开(公告)日： 2006-08-22
- 发明人: Khandker N. Quader , Khanh T. Nguyen , Feng Pan , Long C. Pham , Alexander K. Mak
- 申请人： Khandker N. Quader , Khanh T. Nguyen , Feng Pan , Long C. Pham , Alexander K. Mak
- 申请人地址： US CA Milpitas
- 专利权人： SanDisk Corporation
- 当前专利权人： SanDisk Corporation
- 当前专利权人地址： US CA Milpitas
- 代理机构： Parsons Hsue & de Runtz LLP
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.
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