Invention Grant
- Patent Title: Method of erasing NAND flash memory device
- Patent Title (中): 擦除NAND闪存器件的方法
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Application No.: US11007183Application Date: 2004-12-09
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Publication No.: US07095656B2Publication Date: 2006-08-22
- Inventor: Keun Woo Lee
- Applicant: Keun Woo Lee
- Applicant Address: KR Ichon-shi
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Ichon-shi
- Agency: Mayer, Brown, Rowe and Maw LLP
- Priority: KR10-2004-0012714 20040225
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
Provided is concerned with a method of erasing a NAND flash memory device, capable of restraining an erasing disturbance fail arising from a deselected cell block and improving a product yield of the device by applying a negative voltage to a well of a high voltage transistor forming an X-decoder during an erasing operation in the NAND flash memory device.
Public/Granted literature
- US20050185471A1 Method of erasing NAND flash memory device Public/Granted day:2005-08-25
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