Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US10490980Application Date: 2002-09-27
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Publication No.: US07098081B2Publication Date: 2006-08-29
- Inventor: Masayuki Sakakibara , Masaru Morishita
- Applicant: Masayuki Sakakibara , Masaru Morishita
- Applicant Address: JP Shizuoka
- Assignee: Hamamatsu Photonics K.K.
- Current Assignee: Hamamatsu Photonics K.K.
- Current Assignee Address: JP Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2001-297620 20010927
- International Application: PCT/JP02/10090 WO 20020927
- International Announcement: WO03/030259 WO 20030410
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/48
Abstract:
Cut faces 15a to 15h are formed on the front end faces 13a to 13h of the exposed portions 12a to 12h of respective lead terminals 11a to 11h of a semiconductor device 100, and plating for increasing the solderability is provided on the cut faces 15a to 15h.
Public/Granted literature
- US20050003582A1 Semiconductor device and method of manufacturing the device Public/Granted day:2005-01-06
Information query
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