- 专利标题: Semiconductor device and method of manufacturing thereof
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申请号: US10456503申请日: 2003-06-09
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公开(公告)号: US07098086B2公开(公告)日: 2006-08-29
- 发明人: Hiroshi Shibata , Atsuo Isobe
- 申请人: Hiroshi Shibata , Atsuo Isobe
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
To provide a liquid crystal display device having high quality display by obtaining a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a different layer from a gate electrode and the capacitor wiring is arranged so as to be parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of a neighboring pixel can be avoided, whereby obtaining satisfactory display images.
公开/授权文献
- US20040126945A1 Semiconductor device and method of manufacturing thereof 公开/授权日:2004-07-01
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