发明授权
- 专利标题： Memory device with multiple memory layers of local charge storage
- 专利标题（中）： 具有多个本地电荷存储层的存储器件
-
申请号： US10939132申请日： 2004-09-09
-
公开(公告)号： US07098505B1公开(公告)日： 2006-08-29
- 发明人: Kyung Joon Han , Sung-Rae Kim , Robert Broze
- 申请人： Kyung Joon Han , Sung-Rae Kim , Robert Broze
- 申请人地址： US CA Mountain View
- 专利权人： Actel Corporation
- 当前专利权人： Actel Corporation
- 当前专利权人地址： US CA Mountain View
- 代理机构： Sierra Patent Group, Ltd.
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A multiple memory layer device has a plurality of stacked memory layers. Each of the memory layers has: a charge generating layer of p-type semiconductor material with a plurality of n-type diffusion regions; an insulating layer disposed over the charge generating layer; a charge storing layer disposed over the insulating layer; and another insulating layer disposed over the charge storing layer. A gate is disposed over the top insulting layer in the uppermost memory layer in the plurality of stacked memory layers.
信息查询
IPC分类:
