发明授权
US07099186B1 Double-decker MRAM cells with scissor-state angled reference layer magnetic anisotropy and method for fabricating
失效
具有剪刀状角度参考层磁各向异性的双层MRAM单元及其制造方法
- 专利标题： Double-decker MRAM cells with scissor-state angled reference layer magnetic anisotropy and method for fabricating
- 专利标题（中）： 具有剪刀状角度参考层磁各向异性的双层MRAM单元及其制造方法
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申请号： US11054735申请日： 2005-02-10
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公开(公告)号： US07099186B1公开(公告)日： 2006-08-29
- 发明人: Daniel Braun
- 申请人： Daniel Braun
- 申请人地址： DE Munich FR Corbeil Essonnes Cedex
- 专利权人： Infineon Technologies AG,Altis Semiconductor
- 当前专利权人： Infineon Technologies AG,Altis Semiconductor
- 当前专利权人地址： DE Munich FR Corbeil Essonnes Cedex
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
A double-decker MRAM cell is provided, including a stacked structure of first and second magnetic tunnel junctions. Each magnetic tunnel junction includes free and fixed magnetic regions made of magnetic material separated by a tunneling barrier layer made of non-magnetic material. The fixed magnetic regions are pinned by at least one pinning layer made of the same antiferromagnetic material such that in applying an external magnetic field fixed magnetizations are brought into a scissored configuration.
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