发明授权
- 专利标题： Semiconductor light-receiving device with multiple potentials applied to layers of multiple conductivities
- 专利标题（中）： 具有多个电位的半导体光接收装置应用于多个电导率层
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申请号： US10665259申请日： 2003-09-22
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公开(公告)号： US07105798B2公开(公告)日： 2006-09-12
- 发明人: Gang Wang , Yoshihiro Yoneda
- 申请人： Gang Wang , Yoshihiro Yoneda
- 申请人地址： JP Yamanashi
- 专利权人： Fujitsu Quantum Devices Limited
- 当前专利权人： Fujitsu Quantum Devices Limited
- 当前专利权人地址： JP Yamanashi
- 代理机构： Armstrong, Kratz, Quintos, Hanson & BrooksLLP
- 优先权： JP2002-274304 20020920
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
A semiconductor light-receiving device includes: a substrate that has a first surface and a second surface facing each other; a first semiconductor layer that is formed on the first surface of the substrate and includes at least one semiconductor layer of a first conductivity type; a light absorption layer that is formed on the first semiconductor layer and generates carriers in accordance with incident light; a second semiconductor layer that is formed on the light absorption layer and includes at least one semiconductor layer of a second conductivity type; a first electrode part that is electrically connected to the first semiconductor layer and applies a first potential thereto; a second electrode part that is electrically connected to the second semiconductor layer and applies a second potential thereto; and a third semiconductor layer of the second conductivity type that is interposed between the first surface of the substrate and the first semiconductor layer.
公开/授权文献
- US20040056179A1 Semiconductor light-receiving device 公开/授权日：2004-03-25
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