发明授权
- 专利标题： Reduced floating body effect static random access memory cells and methods for fabricating the same
- 专利标题（中）： 减少浮体效应静态随机存取存储单元及其制造方法
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申请号： US10388353申请日： 2003-03-13
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公开(公告)号： US07105900B2公开(公告)日： 2006-09-12
- 发明人: Mu-Kyoung Jung , Young-Wug Kim , Hee-Sung Kang
- 申请人： Mu-Kyoung Jung , Young-Wug Kim , Hee-Sung Kang
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec PA
- 优先权： KR2002-14705 20020319
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
An SRAM cell that may reduce or eliminate floating body effect when using a SOI and a method for fabricating the same are provided. A floating body of an access transistor of the SRAM is connected to a source region of a driver transistor, for example, through a body extension region extending from an active region. A silicide layer may be formed or a ground line contact may be over-etched to form a conductive contact plug that may provide a current path between the body exterior regions and the source region of the driver transistor.