发明授权
US07106627B2 Nonvolatile semiconductor memory device with redundancy and security information circuitry
有权
具有冗余和安全信息电路的非易失性半导体存储器件
- 专利标题： Nonvolatile semiconductor memory device with redundancy and security information circuitry
- 专利标题（中）： 具有冗余和安全信息电路的非易失性半导体存储器件
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申请号： US11194716申请日： 2005-08-02
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公开(公告)号： US07106627B2公开(公告)日： 2006-09-12
- 发明人: Noboru Shibata , Tomoharu Tanaka
- 申请人： Noboru Shibata , Tomoharu Tanaka
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Banner & Witcoff, Ltd.
- 优先权： JP2000-297443 20000928
- 主分类号： G11C16/22
- IPC分类号： G11C16/22 ; G11C16/06
摘要：
A memory cell array has a first and a second storage area. The first storage area has memory elements selected by an address signal. The second storage area has memory elements selected by a control signal. A control circuit has a fuse element. When the fuse element has been blown, the control circuit inhibits at least one of writing and erasing from being done on the second storage area.
公开/授权文献
- US20050265092A1 Nonvolatile semiconductor memory device 公开/授权日：2005-12-01
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