Invention Grant
- Patent Title: Bumpless semiconductor device
- Patent Title (中): 无铅半导体器件
-
Application No.: US10467638Application Date: 2002-02-18
-
Publication No.: US07109058B2Publication Date: 2006-09-19
- Inventor: Yukio Yamada , Masayuki Nakamura , Hiroyuki Hishinuma
- Applicant: Yukio Yamada , Masayuki Nakamura , Hiroyuki Hishinuma
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Sony Chemicals Corp.,Sony Corporation
- Current Assignee: Sony Chemicals Corp.,Sony Corporation
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Oliff & Berridge, PLC.
- Priority: JP2001-042378 20010219
- International Application: PCT/JP02/01357 WO 20020218
- International Announcement: WO02/067317 WO 20020829
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
When connecting a semiconductor device such as an IC chip with a circuit board by the flip-chip method, a semiconductor device is provided without forming bumps thereon, which enables highly reliable and low cost connection between the IC chip and circuit board while ensuring suppressing short-circuiting, lowering connection costs, suppressing stress concentrations at the joints and reducing damage of the IC chip or circuit board. The bumpless semiconductor device is provided with electrode pads 2 on the surface thereof and with a passivation film 3 at the periphery of the electrode pads 2, and conductive particles 4 are metallically bonded to the electric pads 2. Composite particles in which a metallic plating layer is formed at the surface of resin particles are employed as the conductive particles 4. This bumpless semiconductor device can be manufactured by (a) causing conductive particles to be electrostatically adsorbed onto one face of a flat plate; and (b) overlaying the surface of the plate having the adsorbed conductive particles on the surface of electrode pads of a bumpless semiconductor device which is provided with the electrode pads on the surface thereof and with a passivation film at the periphery of the electrode pads, and ultrasonically welding this assembly, so that the conductive particles are metallically bonded and transferred from the flat plate to the electrode pads.
Public/Granted literature
- US20040217460A1 Bumpless semiconductor device Public/Granted day:2004-11-04
Information query
IPC分类: