发明授权
- 专利标题: Bumpless semiconductor device
- 专利标题(中): 无铅半导体器件
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申请号: US10467638申请日: 2002-02-18
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公开(公告)号: US07109058B2公开(公告)日: 2006-09-19
- 发明人: Yukio Yamada , Masayuki Nakamura , Hiroyuki Hishinuma
- 申请人: Yukio Yamada , Masayuki Nakamura , Hiroyuki Hishinuma
- 申请人地址: JP Tokyo JP Tokyo
- 专利权人: Sony Chemicals Corp.,Sony Corporation
- 当前专利权人: Sony Chemicals Corp.,Sony Corporation
- 当前专利权人地址: JP Tokyo JP Tokyo
- 代理机构: Oliff & Berridge, PLC.
- 优先权: JP2001-042378 20010219
- 国际申请: PCT/JP02/01357 WO 20020218
- 国际公布: WO02/067317 WO 20020829
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
When connecting a semiconductor device such as an IC chip with a circuit board by the flip-chip method, a semiconductor device is provided without forming bumps thereon, which enables highly reliable and low cost connection between the IC chip and circuit board while ensuring suppressing short-circuiting, lowering connection costs, suppressing stress concentrations at the joints and reducing damage of the IC chip or circuit board. The bumpless semiconductor device is provided with electrode pads 2 on the surface thereof and with a passivation film 3 at the periphery of the electrode pads 2, and conductive particles 4 are metallically bonded to the electric pads 2. Composite particles in which a metallic plating layer is formed at the surface of resin particles are employed as the conductive particles 4. This bumpless semiconductor device can be manufactured by (a) causing conductive particles to be electrostatically adsorbed onto one face of a flat plate; and (b) overlaying the surface of the plate having the adsorbed conductive particles on the surface of electrode pads of a bumpless semiconductor device which is provided with the electrode pads on the surface thereof and with a passivation film at the periphery of the electrode pads, and ultrasonically welding this assembly, so that the conductive particles are metallically bonded and transferred from the flat plate to the electrode pads.
公开/授权文献
- US20040217460A1 Bumpless semiconductor device 公开/授权日:2004-11-04
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