发明授权
- 专利标题: Apparatus and methods for two-dimensional ion beam profiling
- 专利标题(中): 二维离子束分析的装置和方法
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申请号: US10981887申请日: 2004-11-05
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公开(公告)号: US07109499B2公开(公告)日: 2006-09-19
- 发明人: Gordon C. Angel , Edward D. MacIntosh , Thomas A. Schaefer
- 申请人: Gordon C. Angel , Edward D. MacIntosh , Thomas A. Schaefer
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 主分类号: H01J37/04
- IPC分类号: H01J37/04
摘要:
Methods and apparatus are provided for measuring a profile of an ion beam. The apparatus includes an array of beam current sensors, each producing a sensor signal in response to incident ions of the ion beam, a translation mechanism configured to translate the array of beam current sensors along a translation path with respect to the ion beam, and a controller configured to acquire the sensor signals produced by the beam current sensors at a plurality of positions along the translation path, wherein the acquired sensor signals are representative of a two-dimensional profile of the ion beam.
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