发明授权
- 专利标题： Low power fuse structure and method of making the same
- 专利标题（中）： 低功率熔断器结构及制作方法
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申请号： US10805747申请日： 2004-03-22
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公开(公告)号： US07109564B2公开(公告)日： 2006-09-19
- 发明人: Shien-Yang Wu , Shi-Bai Chen
- 申请人： Shien-Yang Wu , Shi-Bai Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
A fuse comprises a silicide element disposed above a substrate, a first terminal contact coupled to a first end of the silicide element, and a first metal line disposed above the silicide element and coupled to the first terminal contact. The fuse further comprises a plurality of second terminal contacts coupled to a second end of the silicide element, and a second metal line disposed above the silicide element and coupled to the plurality of second terminal contacts. The silicide element has a sufficient width that a programming potential applied across the first and second metal lines causes a discontinuity in the first terminal contact.
公开/授权文献
- US20050218475A1 Low power fuse structure and method for making the same 公开/授权日：2005-10-06
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